052-6282 rev b 6-2008 apt30gt60brdq2(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt30gt60brdq2(g) 600 30 6430 110 110a @ 600v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3 4 5 1.6 2.0 2.5 2.8 50 1000 100 600v apt30gt60brdq2 APT30GT60BRDQ2G* *g denotes rohs compliant, pb free terminal finish. ? c e g the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ?? low?forward?voltage?drop? ???high?freq.?switching?to?100khz ?? low?tail?current? ???ultra?low?leakage?current ?? rbsoa?and?scsoa?rated thunderbolt igbt ? to-247 g c e downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) thermal and mechanical characteristics unit c/w gm min typ max .50 .67 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 30a t j = 150c, r g = 10 ?,? v ge = 15v, l = 100h,v ce = 600v i nductive?switching?(25c) v cc = 400v v ge = 15v i c = 30a r g = 10 ? t j = +25c inductive?switching?(125c) v cc = 400v v ge = 15v i c = 30a r g = 10 ?? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1600 150 92 7.5 145 10 60 110 12 20 225 80 525 605 600 12 20 245 100 570 965 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt?reserves?the?right?to?change,?without?notice,?the?speciications?and?information?contained?herein . downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 100 9080 70 60 50 40 30 20 10 0 100 9080 70 60 50 40 30 20 10 0 4.54.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140120 100 8060 40 20 0 1614 12 10 86 4 2 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 9080 70 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure?1,??output??characteristics(t j =?25c)? figure?2,??output??characteristics?(t j =?125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure?3,??transfer??characteristics? figure?4,?gate??charge v ge , gate-to-emitter voltage (v) t j ,?junction?temperature?(c) figure?5,??on??state?voltage?vs?gate-to-?emitter?voltage? figure?6,?on?state?voltage?vs?junction?temp erature t j ,?junction?temperature?(c)? t c ,?case?temperature?(c) figure?7,?threshold?voltage??vs.?junction?temperature? figure?8,?dc?collector?current?vs?case?tempera ture 15 &13v 9v 8v 7v 10v 6v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a t j = 125c t j = 25c t j = -55c 11v v ce = 480v v ce = 300v v ce = 120v i c = 30a t j = 25c v ge = 15v downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 10 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?9,?turn-on?delay?time?vs?collector?current? figure?10,?turn-off?delay?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?11,??current?rise?time?vs?collector?current? figure?12,??current?fall?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?13,?turn-on?energy?loss?vs?collector?current? figure??14,??turn?off?energy?loss?vs?collector?c urrent r g , gate resistance (ohms) t j ,?junction?temperature?(c) figure?15,?switching?energy?losses??vs.?gate?resistance? figure?16,?switching?energy?losses??vs?junct ion?temperature r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or 125c r g = 10 ? l = 100h 1614 12 10 86 4 2 0 6050 40 30 20 10 0 30002500 2000 1500 1000 500 0 45004000 3500 3000 1500 1000 500 0 300250 200 150 100 50 0 160140 120 100 8060 40 20 0 20001500 1000 500 0 30002500 2000 1500 1000 500 0 v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v v ce = 400v v ge = +15v r g = 10 ? 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 0 25 50 75 100 125 r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c e on2, 60a e off, 60a v ce = 400v v ge = +15v t j = 125c e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) typical performance curves 0.600.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure?19a,?maximum?effective?transient?thermal?impedance,?junction-to-case?vs?pulse?duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,0001,000 500100 5010 120100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure?17,?capacitance??v s collecto r-to-emitter??voltage? figure?18,minimim?switching?safe?operating?area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure?19b,??transient??thermal?impedance??model 5 15 25 35 45 55 65 f max , operating frequency (khz) i c , collector current (a) figure?20,?operating??frequency??vs?collector??current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 10 ? 140 5010 51 c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c oes c ies 0.08380.207 0.209 0.002450.00548 0.16 5 powe r (watts) junction temp. ( c) rc model case temperature. ( c) downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) apt40dq60 i c a d.u.t. v ce figure?21,?inductive?switching?test?circui t v cc figure?22,?turn-on?switching?waveforms?and?deinitions figure?23,?turn-off?switching?waveforms?and?deinitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) typical performance curves characteristic / test conditions maximum average forward current (t c = 111c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f ( av ) i f ( rms ) i fsm symbol v f characteristic / test conditions i f = 30a forward voltage i f = 60a i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.85 2.24 1.48 apt30gt60brdq2(g) 4063 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 22 - 25 - 35 - 3 - - 160 - 480 - 6 - - 85 - 920 - 20 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 40a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure?24a.?maximum?effective?transient?thermal?impedance,?junction-to-case?vs.?pulse?duration 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 24b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.2890.381 0.004480.120 powe r (watts) rc model junction temp ( c) case temperature ( c) d = 0.9 downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) t j = 125 c v r = 400v 20a 40a 80a 180160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure?29.?dynamic?parameters?vs.?junction?temperature? figure?30.?maximum?average?forward?current?vs .?casetemperature? v r , reverse voltage (v) figure?31.??junction?capacitance?vs.?reverse?voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 80a 20a 40a 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 120100 8060 40 20 0 14001200 1000 800600 400 200 0 t j = 125 c v r = 400v 80a 40a 20a t rr q rr q rr t rr i rrm 1.41.2 1.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) ?????????????????????????figure?25.?forward?current?vs.?forward?voltage? figure?26.?reverse?recovery? time?vs.?current?rate?of?change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) ? ???????figure?27.?reverse?recovery?charge?vs.?current?rate?of?change? figure?28.?reverse?recovery?cu rrent?vs.?current?rate?of?change downloaded from: http:///
052-6282 rev b 6-2008 apt30gt60brdq2(g) typical performance curves 4 3 1 2 5 5 zero 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure?32.?diode?test?circui t figure?33,?diode?reverse?recovery?waveform?and?definitions 0.25?i rrm pearson 2878 current transformer di f /d t adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform to - 247??package??outlin e e1 sac: tin, silver, copper 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector(cathode ) emitter (anode ) gate collector (cathode) apt6017lll downloaded from: http:///
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